Modeling of graphene metal-oxide-semiconductor field-effect transistors with gapless large-area graphene channels

100-GHz Transistors from Wafer-Scale Epitaxial Graphene

(2010) Y.-M. Lin et al.   SCIENCE

High-field transport and velocity saturation in graphene

(2009) Jyotsna Chauhan et al.   APPLIED PHYSICS LETTERS

Graphene-on-Insulator Transistors Made Using C on Ni Chemical-Vapor Deposition

(2009) J. Kedzierski et al.   IEEE ELECTRON DEVICE LETTERS

Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates

(2009) J.S. Moon et al.   IEEE ELECTRON DEVICE LETTERS

Velocity saturation in intrinsic graphene

(2009) R S Shishir et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Dielectric Screening Enhanced Performance in Graphene FET

(2009) Fang Chen et al.   NANO LETTERS

Diffusive charge transport in graphene on SiO2

(2009) J.-H. Chen et al.   SOLID STATE COMMUNICATIONS

Analysis of ballistic monolayer and bilayer graphene field-effect transistors

(2008) Yijian Ouyang et al.   APPLIED PHYSICS LETTERS

Effect of edge roughness on electronic transport in graphene nanoribbon channel metal-oxide-semiconductor field-effect transistors

(2008) D. Basu et al.   APPLIED PHYSICS LETTERS

Epitaxial Graphene Transistors on SiC Substrates

(2008) Jakub Kedzierski et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Performance Comparison of Graphene Nanoribbon FETs With Schottky Contacts and Doped Reservoirs

(2008) Youngki Yoon et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Electron transport and full-band electron-phonon interactions in graphene

(2008) Akin Akturk et al.   JOURNAL OF APPLIED PHYSICS

Current saturation in zero-bandgap, top-gated graphene field-effect transistors

(2008) Inanc Meric et al.   Nature Nanotechnology

Intrinsic and extrinsic performance limits of graphene devices on SiO2

(2008) Jian-Hao Chen et al.   Nature Nanotechnology

Tight-binding energy dispersions of armchair-edge graphene nanostrips

(2008) D. Gunlycke et al.   PHYSICAL REVIEW B

Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer

(2008) S. V. Morozov et al.   PHYSICAL REVIEW LETTERS

Room-Temperature All-Semiconducting Sub-10-nm Graphene Nanoribbon Field-Effect Transistors

(2008) Xinran Wang et al.   PHYSICAL REVIEW LETTERS

Chemically Derived, Ultrasmooth Graphene Nanoribbon Semiconductors

(2008) X. Li et al.   SCIENCE