Top-Gated Epitaxial Graphene FETs on Si-Face SiC Wafers With a Peak Transconductance of 600 mS/mm

Title
Top-Gated Epitaxial Graphene FETs on Si-Face SiC Wafers With a Peak Transconductance of 600 mS/mm
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 31, Issue 4, Pages 260-262
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2010-03-02
DOI
10.1109/led.2010.2040132

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