55% PAE and High Power Ka-Band GaN HEMTs With Linearized Transconductance via $\hbox{n}+$ GaN Source Contact Ledge

Published 2008 View Full Article

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Title
55% PAE and High Power Ka-Band GaN HEMTs With Linearized Transconductance via $\hbox{n}+$ GaN Source Contact Ledge
Authors
Keywords
-
Journal
IEEE ELECTRON DEVICE LETTERS
Volume 29, Issue 8, Pages 834-837
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2008-07-30
DOI
10.1109/led.2008.2000792

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