Damage at hydrogenated amorphous/crystalline silicon interfaces by indium tin oxide overlayer sputtering

Kinetics ofa-Si:H bulk defect anda-Si:H/c-Si interface-state reduction

(2012) Stefaan De Wolf et al.   PHYSICAL REVIEW B

Effect of ion bombardment on the a-Si:H based surface passivation of c-Si surfaces

(2011) A. Illiberi et al.   APPLIED PHYSICS LETTERS

Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment

(2011) A. Descoeudres et al.   APPLIED PHYSICS LETTERS

Very fast light-induced degradation ofa-Si:H/c-Si(100) interfaces

(2011) Stefaan De Wolf et al.   PHYSICAL REVIEW B

The silane depletion fraction as an indicator for the amorphous/crystalline silicon interface passivation quality

(2010) A. Descoeudres et al.   APPLIED PHYSICS LETTERS

Interplay of amorphous silicon disorder and hydrogen content with interface defects in amorphous/crystalline silicon heterojunctions

(2010) T. F. Schulze et al.   APPLIED PHYSICS LETTERS

Development status of high-efficiency HIT solar cells

(2010) Takahiro Mishima et al.   SOLAR ENERGY MATERIALS AND SOLAR CELLS

Nature of doped a-Si:H/c-Si interface recombination

(2009) Stefaan De Wolf et al.   JOURNAL OF APPLIED PHYSICS

Reduction of Optical Loss in Hydrogenated Amorphous Silicon/Crystalline Silicon Heterojunction Solar Cells by High-Mobility Hydrogen-Doped In2O3Transparent Conductive Oxide

(2008) Takashi Koida et al.   Applied Physics Express

Stretched-exponential a-Si:H∕c-Si interface recombination decay

(2008) Stefaan De Wolf et al.   APPLIED PHYSICS LETTERS

Role of hydrogen bonding environment in a-Si:H films for c-Si surface passivation

(2008) M. Z. Burrows et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A