Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 25, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3455900
Keywords
annealing; defect states; elemental semiconductors; hydrogen; hydrogen bonds; infrared spectra; interface structure; photoelectron spectra; semiconductor heterojunctions; semiconductor thin films; silicon
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Funding
- European Commission [211821]
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We analyze the dependence of the interface defect density D(it) in amorphous/crystalline silicon (a-Si:H/c-Si) heterojunctions on the microscopic properties of ultrathin (10 nm) undoped a-Si:H passivation layers. It is shown that the hydrogen bonding and network disorder, probed by infrared- and photoelectron spectroscopy, govern the initial D(it) and its behavior upon a short thermal treatment at 200 degrees C. While the initial D(it) is determined by the local and nonequilibrated interface structure, the annealed D(it) is defined by the bulk a-Si:H network strain. Thus it appears that the equilibrated a-Si:H/c-Si interface does not possess unique electronic properties but is governed by the a-Si:H bulk defects. (C) 2010 American Institute of Physics. [doi:10.1063/1.3455900]
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