Journal
PHYSICAL REVIEW B
Volume 83, Issue 23, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.83.233301
Keywords
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Funding
- European Community [256695]
- Axpo Naturstrom Fonds, Switzerland
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Light-induced degradation (LID) of crystalline silicon (c-Si) surfaces passivated with hydrogenated amorphous silicon (a-Si:H) is investigated. The initial passivation decays on polished c-Si(100) surfaces on a time scale much faster than usually associated with bulk a-Si:H LID. This phenomenon is absent for the a-Si:H/c-Si(111) interface. We attribute these differences to the allowed reconstructions on the respective surfaces. This may point to a link between the presence of so-called fast states and (internal) surface reconstruction in bulk a-Si:H.
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