Band gap widening with time induced by structural relaxation in amorphous Ge2Sb2Te5 films

Role of mechanical stress in the resistance drift of Ge2Sb2Te5 films and phase change memories

(2011) M. Rizzi et al.   APPLIED PHYSICS LETTERS

Physical origin of the resistance drift exponent in amorphous phase change materials

(2011) Mattia Boniardi et al.   APPLIED PHYSICS LETTERS

Extremely low drift of resistance and threshold voltage in amorphous phase change nanowire devices

(2010) Mukut Mitra et al.   APPLIED PHYSICS LETTERS

Effects of pressure on atomic and electronic structure and crystallization dynamics of amorphousGe2Sb2Te5

(2010) Jino Im et al.   PHYSICAL REVIEW B

Dependence of resistance drift on the amorphous cap size in phase change memory arrays

(2009) Stefania Braga et al.   APPLIED PHYSICS LETTERS

Reliability Impact of Chalcogenide-Structure Relaxation in Phase-Change Memory (PCM) Cells—Part I: Experimental Study

(2009) Daniele Ielmini et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

First-principles study of crystalline and amorphous Ge2Sb2Te5and the effects of stoichiometric defects

(2009) S Caravati et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Optical properties and phase change transition in Ge2Sb2Te5 flash evaporated thin films studied by temperature dependent spectroscopic ellipsometry

(2008) J. Orava et al.   JOURNAL OF APPLIED PHYSICS

Resonant bonding in crystalline phase-change materials

(2008) Kostiantyn Shportko et al.   NATURE MATERIALS

Phase-change memories

(2008) Andrea L. Lacaita et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Thermomechanical properties and mechanical stresses of Ge2Sb2Te5 films in phase-change random access memory

(2008) Il-Mok Park et al.   THIN SOLID FILMS