Physical origin of the resistance drift exponent in amorphous phase change materials

Disorder-induced localization in crystalline phase-change materials

(2011) T. Siegrist et al.   NATURE MATERIALS

Effects of pressure on atomic and electronic structure and crystallization dynamics of amorphousGe2Sb2Te5

(2010) Jino Im et al.   PHYSICAL REVIEW B

Common signature of many-body thermal excitation in structural relaxation and crystallization of chalcogenide glasses

(2009) Daniele Ielmini et al.   APPLIED PHYSICS LETTERS

Dependence of resistance drift on the amorphous cap size in phase change memory arrays

(2009) Stefania Braga et al.   APPLIED PHYSICS LETTERS

Reliability Impact of Chalcogenide-Structure Relaxation in Phase-Change Memory (PCM) Cells—Part I: Experimental Study

(2009) Daniele Ielmini et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A physics-based model of electrical conduction decrease with time in amorphous Ge2Sb2Te5

(2009) M. Boniardi et al.   JOURNAL OF APPLIED PHYSICS

Temperature acceleration of structural relaxation in amorphous Ge2Sb2Te5

(2008) D. Ielmini et al.   APPLIED PHYSICS LETTERS