Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers
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Title
Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 101, Issue 16, Pages 161110
Publisher
AIP Publishing
Online
2012-10-18
DOI
10.1063/1.4759044
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- Direct measurement of auger recombination in In0.1Ga0.9N/GaN quantum wells and its impact on the efficiency of In0.1Ga0.9N/GaN multiple quantum well light emitting diodes
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- (2009) Han-Youl Ryu et al. APPLIED PHYSICS LETTERS
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- Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells
- (2009) Jae-Hyun Ryou et al. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
- Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells
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- (2008) Martin F. Schubert et al. APPLIED PHYSICS LETTERS
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