Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers

Auger recombination in GaInN/GaN quantum well laser structures

(2011) M. Brendel et al.   APPLIED PHYSICS LETTERS

Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes

(2011) Emmanouil Kioupakis et al.   APPLIED PHYSICS LETTERS

Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers

(2011) C. H. Wang et al.   APPLIED PHYSICS LETTERS

Focus Issue: Optics in LEDs for Lighting

(2011) Jae-Hyun Ryou et al.   OPTICS EXPRESS

A numerical study of Auger recombination in bulk InGaN

(2010) Francesco Bertazzi et al.   APPLIED PHYSICS LETTERS

Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes

(2010) Hee Jin Kim et al.   APPLIED PHYSICS LETTERS

Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer

(2010) Suk Choi et al.   APPLIED PHYSICS LETTERS

Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes

(2010) Shih-Chun Ling et al.   APPLIED PHYSICS LETTERS

Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer

(2010) C. H. Wang et al.   APPLIED PHYSICS LETTERS

Effect of P-Type Last Barrier on Efficiency Droop of Blue InGaN Light-Emitting Diodes

(2010) Yen-Kuang Kuo et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

GaN-Based Light-Emitting Diodes: Efficiency at High Injection Levels

(2010) Ümit Ozgur et al.   PROCEEDINGS OF THE IEEE

Auger recombination rates in nitrides from first principles

(2009) Kris T. Delaney et al.   APPLIED PHYSICS LETTERS

Direct measurement of auger recombination in In0.1Ga0.9N/GaN quantum wells and its impact on the efficiency of In0.1Ga0.9N/GaN multiple quantum well light emitting diodes

(2009) M. Zhang et al.   APPLIED PHYSICS LETTERS

Rate equation analysis of efficiency droop in InGaN light-emitting diodes

(2009) Han-Youl Ryu et al.   APPLIED PHYSICS LETTERS

Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

(2009) Q. Dai et al.   APPLIED PHYSICS LETTERS

Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells

(2009) Jae-Hyun Ryou et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells

(2008) Xianfeng Ni et al.   APPLIED PHYSICS LETTERS

Barrier effect on hole transport and carrier distribution in InGaN∕GaN multiple quantum well visible light-emitting diodes

(2008) J. P. Liu et al.   APPLIED PHYSICS LETTERS

On the importance of radiative and Auger losses in GaN-based quantum wells

(2008) J. Hader et al.   APPLIED PHYSICS LETTERS

Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop

(2008) Martin F. Schubert et al.   APPLIED PHYSICS LETTERS