Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission
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Title
Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 101, Issue 14, Pages 142109
Publisher
AIP Publishing
Online
2012-10-05
DOI
10.1063/1.4757423
References
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Related references
Note: Only part of the references are listed.- 384 nm laser diode grown on a (202¯1) semipolar relaxed AlGaN buffer layer
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- (2012) R M Farrell et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
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- (2011) Erin C. Young et al. Applied Physics Express
- Misfit dislocation formation via pre-existing threading dislocation glide in (112¯2) semipolar heteroepitaxy
- (2011) Po Shan Hsu et al. APPLIED PHYSICS LETTERS
- Observation of non-basal slip in semipolar InxGa1-xN/GaN heterostructures
- (2011) Feng Wu et al. APPLIED PHYSICS LETTERS
- Demonstration of 505 nm laser diodes using wavelength-stable semipolar (2021¯) InGaN/GaN quantum wells
- (2011) Chia-Yen Huang et al. APPLIED PHYSICS LETTERS
- Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy
- (2011) Alexey E. Romanov et al. JOURNAL OF APPLIED PHYSICS
- Critical Thickness for Onset of Plastic Relaxation in (11\bar22) and (20\bar21) Semipolar AlGaN Heterostructures
- (2010) Erin C. Young et al. Applied Physics Express
- Anisotropy of tensile stresses and cracking in nonbasal plane AlxGa1−xN/GaN heterostructures
- (2010) Erin C. Young et al. APPLIED PHYSICS LETTERS
- Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20\bar21} GaN Substrates
- (2009) Yusuke Yoshizumi et al. Applied Physics Express
- Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (112¯2) GaN free standing substrates
- (2009) Anurag Tyagi et al. APPLIED PHYSICS LETTERS
- Demonstration of an ultraviolet 336 nm AlGaN multiple-quantum-well laser diode
- (2008) Harumasa Yoshida et al. APPLIED PHYSICS LETTERS
- A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode
- (2008) Harumasa Yoshida et al. Nature Photonics
- Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN
- (2008) Patrick Rinke et al. PHYSICAL REVIEW B
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