Misfit dislocation formation via pre-existing threading dislocation glide in (112¯2) semipolar heteroepitaxy

Misfit dislocation formation at heterointerfaces in (Al,In)GaN heteroepitaxial layers grown on semipolar free-standing GaN substrates

(2011) F. Wu et al.   JOURNAL OF APPLIED PHYSICS

Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy

(2011) Alexey E. Romanov et al.   JOURNAL OF APPLIED PHYSICS

Nonpolar and Semipolar Group III Nitride-Based Materials

(2011) J. S. Speck et al.   MRS BULLETIN

Lattice Tilt and Misfit Dislocations in (11\bar22) Semipolar GaN Heteroepitaxy

(2010) Erin C. Young et al.   Applied Physics Express

Critical Thickness for Onset of Plastic Relaxation in (11\bar22) and (20\bar21) Semipolar AlGaN Heterostructures

(2010) Erin C. Young et al.   Applied Physics Express

Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (112¯2) GaN free standing substrates

(2009) Anurag Tyagi et al.   APPLIED PHYSICS LETTERS

Unambiguous evidence of the existence of polarization field crossover in a semipolar InGaN/GaN single quantum well

(2009) H. Shen et al.   APPLIED PHYSICS LETTERS

Calculation of optical eigenmodes and gain in semipolar and nonpolar InGaN/GaN laser diodes

(2009) W. G. Scheibenzuber et al.   PHYSICAL REVIEW B

Stimulated Emission at Blue-Green (480 nm) and Green (514 nm) Wavelengths from Nonpolar (m-plane) and Semipolar (11\bar22) InGaN Multiple Quantum Well Laser Diode Structures

(2008) Anurag Tyagi et al.   Applied Physics Express

Optical properties of yellow light-emitting diodes grown on semipolar (112¯2) bulk GaN substrates

(2008) Hitoshi Sato et al.   APPLIED PHYSICS LETTERS

High-quality nonpolarm-plane GaN substrates grown by HVPE

(2008) Kenji Fujito et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE