Demonstration of 505 nm laser diodes using wavelength-stable semipolar (20(21)over-bar) InGaN/GaN quantum wells

We demonstrate GaN-based semipolar (20 (21) over bar) laser diodes (LD) in the green region of the spectrum. 505 nm lasing was observed under pulsed operation, with a threshold current density (J(th)) of 27.5 kA/cm(2) and a threshold voltage (V-th) of 15.5 V. The blueshift of spontaneous emission was less than 5 nm when varying the injection current level from 125 A/cm(2) to threshold. Simulations show that the reduced blueshift can be attributed to the minimal dependence of the energy potential profile in the active region on the applied bias and current injection level. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3666791]