A Dual-Channel Ferroelectric-Gate Field-Effect Transistor Enabling nand -Type Memory Characteristics

Published 2011 View Full Article

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Title
A Dual-Channel Ferroelectric-Gate Field-Effect Transistor Enabling nand -Type Memory Characteristics
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 58, Issue 5, Pages 1311-1318
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2011-02-25
DOI
10.1109/ted.2011.2110653

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