Improvement in the bias stability of amorphous indium gallium zinc oxide thin-film transistors using an O2 plasma-treated insulator

Published 2009 View Full Article

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Title
Improvement in the bias stability of amorphous indium gallium zinc oxide thin-film transistors using an O2 plasma-treated insulator
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 1, Pages 013507
Publisher
AIP Publishing
Online
2009-07-09
DOI
10.1063/1.3167816
References
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