期刊
APPLIED PHYSICS LETTERS
卷 97, 期 23, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3525605
关键词
-
资金
- National Science Foundation [ECS-0449232]
Direct interband and intraband Auger recombination due to electron-electron-hole and hole-hole-electron transitions in bulk InGaN is investigated by first-order perturbation theory including Fermi statistics, realistic electronic structures obtained by nonlocal empirical pseudopotential calculations, and their corresponding wavevector-dependent dielectric functions. Our results confirm that the intraband Auger coefficient is negligible in alloy compositions relevant for solid-state lighting and indicate that the resonant enhancement associated with interband transitions for wavelengths ranging from blue to green cannot account for the efficiency droop experimentally observed in GaN-based light emitting diodes. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3525605]
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