Temperature-dependent interface-state response in an Al2O3/n-GaN structure

With a combination of the static capacitance-voltage (C-V) and the capacitance transient (C-t) methods. the interface-state response in in Al2O3/n-GaN structure was investigated at temperatures ranging from 23 to 300 degrees C. We observed pronounced degradation of the static C-V curves measured at high temperatures. arising front the enhancement of charging/discharging rates of interface states, at deeper energies within the bandgap of GaN. Faster responses with larger magnitudes also appeared in the time-dependent capacitance at high temperatures. From a simple analysis of the C-t results, we estimated the capture cross section of the states to be on the order 10(-19) cm(2).