Improved Power Device Figure-of-Merit ($4.0\times 10^{8}$ V$^{2}$ $\Omega^{-1}$ cm$^{-2}$) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si

Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN heterostructures by Si substrate removal

(2010) Domenica Visalli et al.   APPLIED PHYSICS LETTERS

Low Specific On-Resistance AlGaN/AlN/GaN High Electron Mobility Transistors on High Resistivity Silicon Substrate

(2010) S. Arulkumaran et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Silicon Substrate Removal of GaN DHFETs for Enhanced (

(2010) Puneet Srivastava et al.   IEEE ELECTRON DEVICE LETTERS

High Breakdown ($> \hbox{1500\ V}$) AlGaN/GaN HEMTs by Substrate-Transfer Technology

(2010) Bin Lu et al.   IEEE ELECTRON DEVICE LETTERS

AlN Passivation Over AlGaN/GaN HFETs for Surface Heat Spreading

(2010) Naohiro Tsurumi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Limitations of Field Plate Effect Due to the Silicon Substrate in AlGaN/GaN/AlGaN DHFETs

(2010) Domenica Visalli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low $R_{\scriptscriptstyle{\rm ON}} \times A$

(2010) Eldad Bahat-Treidel et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

High vertical breakdown strength in with low specific on-resistance AlGaN/AlN/GaN HEMTs on silicon

(2010) S. Arulkumaran et al.   Physica Status Solidi-Rapid Research Letters

Breakdown Enhancement of AlGaN/GaN HEMTs on 4-in Silicon by Improving the GaN Quality on Thick Buffer Layers

(2009) S.L. Selvaraj et al.   IEEE ELECTRON DEVICE LETTERS