Improved Power Device Figure-of-Merit (4.0 x 108 V2 Ω-1 cm-2) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si

The OFF-state breakdown voltage (BVgd) characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) on a 4-in. Si substrate were investigated and analyzed. The HEMTs with L-gd = 10 mu m exhibited BVgd of 723 V with the specific on-resistance R-DS[ON] of 1.3 m Omega cm(2). Due to the improved ohmic contact, the devices exhibited low R-DS[ON] values. The power device figure-of-merit (FOM = BVgd2/R-DS[ON]) is as high as 4.0 x 10(8) V-2 Omega(-1) cm(-2), the highest among the reported values for GaN HEMTs on a 4-in. Si. Due to the low vertical buffer leakage current, a high vertical breakdown voltage of similar to 1200 V has been achieved with the total buffer thickness (d(Buff)) of 2.2 mu m. (C) 2011 The Japan Society of Applied Physics