Electron Mobility Enhancement of Extremely Thin Body In$_{0.7}$Ga$_{0.3}$As-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Substrates by Metal–Oxide–Semiconductor Interface Buffer Layers

Self-Aligned Metal Source/Drain InxGa1-xAs n-Metal–Oxide–Semiconductor Field-Effect Transistors Using Ni–InGaAs Alloy

(2011) SangHyeon Kim et al.   Applied Physics Express

High Performance Extremely Thin Body InGaAs-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Substrates with Ni–InGaAs Metal Source/Drain

(2011) SangHyeon Kim et al.   Applied Physics Express

III-V-on-nothing metal-oxide-semiconductor field-effect transistors enabled by top-down nanowire release process: Experiment and simulation

(2011) J. J. Gu et al.   APPLIED PHYSICS LETTERS

Self-aligned metal source/drain InP n-metal-oxide-semiconductor field-effect transistors using Ni–InP metallic alloy

(2011) SangHyeon Kim et al.   APPLIED PHYSICS LETTERS

Effects of barrier layers on device performance of high mobility In0.7Ga0.3As metal-oxide-semiconductor field-effect-transistors

(2010) Han Zhao et al.   APPLIED PHYSICS LETTERS

III-V-semiconductor-on-insulator n-channel metal-insulator-semiconductor field-effect transistors with buried Al2O3 layers and sulfur passivation: Reduction in carrier scattering at the bottom interface

(2010) Masafumi Yokoyama et al.   APPLIED PHYSICS LETTERS

Erratum: Synthesis of Pt/TiO2 Nanotube Catalysts for Cathodic Oxygen Reduction [J. Electrochem. Soc., 155, B915 (2008)]

(2010) Woo-Jin Lee et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Thin Body III–V-Semiconductor-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Fabricated Using Direct Wafer Bonding

(2009) Masafumi Yokoyama et al.   Applied Physics Express

High performance In0.7Ga0.3As metal-oxide-semiconductor transistors with mobility >4400 cm2/V s using InP barrier layer

(2009) Han Zhao et al.   APPLIED PHYSICS LETTERS

0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode $\hbox{In}_{0.75}\hbox{Ga}_{0.25}\hbox{As}$ MOSFET

(2009) Y. Q. Wu et al.   IEEE ELECTRON DEVICE LETTERS

Inversion-Mode Self-Aligned $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor With HfAlO Gate Dielectric and TaN Metal Gate

(2008) J. Q. Lin et al.   IEEE ELECTRON DEVICE LETTERS

High-Performance $\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ -Channel MOSFETs With High-$\kappa$ Gate Dielectrics and $\alpha$-Si Passivation

(2008) Y. Sun et al.   IEEE ELECTRON DEVICE LETTERS

Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance

(2008) Shinichi Takagi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES