Extremely Narrow Violet Photoluminescence Line from Ultrathin InN Single Quantum Well on Step-Free GaN Surface

Photoluminescence Studies of Polarization Effects in InGaN/(In)GaN Multiple Quantum Well Structures

(2012) Liyang Zhang et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire

(2011) T. Detchprohm et al.   APPLIED PHYSICS LETTERS

Optical Properties of Staggered InGaN/InGaN/GaN Quantum-Well Structures with Ga- and N-Faces

(2011) Seoung-Hwan Park et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes

(2011) Jing Zhang et al.   JOURNAL OF APPLIED PHYSICS

Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells

(2011) Hongping Zhao et al.   OPTICS EXPRESS

Nucleus and Spiral Growth Mechanisms of GaN Studied by Using Selective-Area Metalorganic Vapor Phase Epitaxy

(2010) Tetsuya Akasaka et al.   Applied Physics Express

Supersaturation in nucleus and spiral growth of GaN in metal organic vapor phase epitaxy

(2010) Tetsuya Akasaka et al.   APPLIED PHYSICS LETTERS

Analysis of InGaN-delta-InN quantum wells for light-emitting diodes

(2010) Hongping Zhao et al.   APPLIED PHYSICS LETTERS

Step-Free GaN Hexagons Grown by Selective-Area Metalorganic Vapor Phase Epitaxy

(2009) Tetsuya Akasaka et al.   Applied Physics Express

Metalorganic Vapor Phase Epitaxy of III-Nitride Light-Emitting Diodes on Nanopatterned AGOG Sapphire Substrate by Abbreviated Growth Mode

(2009) Yik-Khoon Ee et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire

(2009) Yik-Khoon Ee et al.   JOURNAL OF CRYSTAL GROWTH

Growth and characterization of unintentionally doped GaN grown on silicon(111) substrates

(2008) M. Leys et al.   JOURNAL OF CRYSTAL GROWTH

Growth and properties of near-UV light emitting diodes based on InN/GaN quantum wells

(2008) E. Dimakis et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE