High-Mobility ZnO Thin Film Transistors Based on Solution-processed Hafnium Oxide Gate Dielectrics

标题
High-Mobility ZnO Thin Film Transistors Based on Solution-processed Hafnium Oxide Gate Dielectrics
作者
关键词
-
出版物
ADVANCED FUNCTIONAL MATERIALS
Volume 25, Issue 1, Pages 134-141
出版商
Wiley
发表日期
2014-11-11
DOI
10.1002/adfm.201402684

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