Radio-frequency plasma-excited molecular beam epitaxy growth of GaN on graphene/Si(100) substrates

Published 2014 View Full Article

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Title
Radio-frequency plasma-excited molecular beam epitaxy growth of GaN on graphene/Si(100) substrates
Authors
Keywords
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Journal
Applied Physics Express
Volume 7, Issue 7, Pages 071001
Publisher
Japan Society of Applied Physics
Online
2014-06-11
DOI
10.7567/apex.7.071001

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