GaN-UV photodetector integrated with asymmetric metal semiconductor metal structure for enhanced responsivity

Title
GaN-UV photodetector integrated with asymmetric metal semiconductor metal structure for enhanced responsivity
Authors
Keywords
-
Journal
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume 29, Issue 11, Pages 8958-8963
Publisher
Springer Nature
Online
2018-03-17
DOI
10.1007/s10854-018-8917-3

Ask authors/readers for more resources

Reprint

Contact the author

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Become a Peeref-certified reviewer

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started