GaN-UV photodetector integrated with asymmetric metal semiconductor metal structure for enhanced responsivity
出版年份 2018 全文链接
标题
GaN-UV photodetector integrated with asymmetric metal semiconductor metal structure for enhanced responsivity
作者
关键词
-
出版物
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume 29, Issue 11, Pages 8958-8963
出版商
Springer Nature
发表日期
2018-03-17
DOI
10.1007/s10854-018-8917-3
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Piezotronic effect tuned AlGaN/GaN high electron mobility transistor
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