Fully Vertical GaN p-i-n Diodes Using GaN-on-Si Epilayers

Authors

Keywords

Journal

Volume 37, Issue 5, Pages 636-639

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Online

2016-03-31

DOI

10.1109/led.2016.2548488

Explore over 38,000 international journals covering a vast array of academic fields.

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now