Surface conductivity enhancement of H-terminated diamond based on the purified epitaxial diamond layer

Normally-Off C–H Diamond MOSFETs With Partial C–O Channel Achieving 2-kV Breakdown Voltage

(2017) Yuya Kitabayashi et al.   IEEE ELECTRON DEVICE LETTERS

Carrier transport characteristics of H-terminated diamond films prepared using molecular hydrogen and atomic hydrogen

(2017) Jin-long Liu et al.   International Journal of Minerals Metallurgy and Materials

Enhanced surface transfer doping of diamond by V2O5 with improved thermal stability

(2016) Kevin G. Crawford et al.   APPLIED PHYSICS LETTERS

Interface features of the HPHT Ib substrate and homoepitaxial CVD diamond layer

(2016) L.F. Hei et al.   DIAMOND AND RELATED MATERIALS

Structural properties and transfer characteristics of sputter deposition AlN and atomic layer deposition Al2O3 bilayer gate materials for H-terminated diamond field effect transistors

(2016) Ryan G. Banal et al.   JOURNAL OF APPLIED PHYSICS

Scalable fabrication of high-quality, ultra-thin single crystal diamond membrane windows

(2016) Afaq Habib Piracha et al.   Nanoscale

RF Operation of Hydrogen-Terminated Diamond Field Effect Transistors: A Comparative Study

(2015) Stephen Russell et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

C-H surface diamond field effect transistors for high temperature (400 °C) and high voltage (500 V) operation

(2014) H. Kawarada et al.   APPLIED PHYSICS LETTERS

A Diamond:H/MoO3 MOSFET

(2014) Alon Vardi et al.   IEEE ELECTRON DEVICE LETTERS

Effect of atomic hydrogen bombardment on the surface conductivity of polycrystalline diamond films

(2013) J.L. Liu et al.   APPLIED SURFACE SCIENCE

High quality thick CVD diamond films homoepitaxially grown on (111)-oriented substrates

(2013) A. Tallaire et al.   DIAMOND AND RELATED MATERIALS

Diamond overgrown InAlN/GaN HEMT

(2011) M. Alomari et al.   DIAMOND AND RELATED MATERIALS

Electronic properties of H-terminated diamond during NO2 and O3 adsorption and desorption

(2011) Hisashi Sato et al.   DIAMOND AND RELATED MATERIALS

High-Performance P-Channel Diamond Metal–Oxide–Semiconductor Field-Effect Transistors on H-Terminated (111) Surface

(2010) Kazuyuki Hirama et al.   Applied Physics Express

Electronic and surface properties of H-terminated diamond surface affected by NO2 gas

(2010) M. Kubovic et al.   DIAMOND AND RELATED MATERIALS

Spontaneous polarization model for surface orientation dependence of diamond hole accumulation layer and its transistor performance

(2008) K. Hirama et al.   APPLIED PHYSICS LETTERS

A comprehensive study on hydrogenated diamond surfaces as obtained by using molecular hydrogen

(2008) C. Manfredotti et al.   DIAMOND AND RELATED MATERIALS

Characteristics of boron δ-doped diamond for electronic applications

(2008) H. El-Hajj et al.   DIAMOND AND RELATED MATERIALS

Recent advances in high-growth rate single-crystal CVD diamond

(2008) Qi Liang et al.   DIAMOND AND RELATED MATERIALS