Carrier transport characteristics of H-terminated diamond films prepared using molecular hydrogen and atomic hydrogen

Gate-Source Distance Scaling Effects in H-Terminated Diamond MESFETs

(2015) Claudio Verona et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Enhanced deposition of ZnO films by Li doping using radio frequency reactive magnetron sputtering

(2015) Liang-xian Chen et al.   International Journal of Minerals Metallurgy and Materials

Effects of the flow rate of hydrogen on the growth of graphene

(2015) Yong-gui Shi et al.   International Journal of Minerals Metallurgy and Materials

Electrical characteristics of hydrogen-terminated diamond metal-oxide-semiconductor with atomic layer deposited HfO2 as gate dielectric

(2013) J. W. Liu et al.   APPLIED PHYSICS LETTERS

Effect of atomic hydrogen bombardment on the surface conductivity of polycrystalline diamond films

(2013) J.L. Liu et al.   APPLIED SURFACE SCIENCE

Mechanism of hole doping into hydrogen terminated diamond by the adsorption of inorganic molecule

(2013) Yoshiteru Takagi et al.   SURFACE SCIENCE

Nucleation and growth surface conductivity of H-terminated diamond films prepared by DC arc jet CVD

(2012) J.L. Liu et al.   DIAMOND AND RELATED MATERIALS

Maximum hole concentration for Hydrogen-terminated diamond surfaces with various surface orientations obtained by exposure to highly concentrated NO2

(2012) Hisashi Sato et al.   DIAMOND AND RELATED MATERIALS

A comprehensive study on hydrogenated diamond surfaces as obtained by using molecular hydrogen

(2008) C. Manfredotti et al.   DIAMOND AND RELATED MATERIALS