Spatial correlation of the EC-0.57 eV trap state with edge dislocations in epitaxial n-type gallium nitride

Electrochemical Liquid Phase Epitaxy (ec-LPE): A New Methodology for the Synthesis of Crystalline Group IV Semiconductor Epifilms

(2017) Joshua Demuth et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

In Situ and Ex Situ Investigations of KF Postdeposition Treatment Effects on CIGS Solar Cells

(2017) Shankar Karki et al.   IEEE Journal of Photovoltaics

Electron traps as major recombination centers in n-GaN films grown by metalorganic chemical vapor deposition

(2016) In-Hwan Lee et al.   Applied Physics Express

Characterization of encapsulated quantum dots via electron channeling contrast imaging

(2016) Julia I. Deitz et al.   APPLIED PHYSICS LETTERS

Dislocation core structures in Si-doped GaN

(2015) S. L. Rhode et al.   APPLIED PHYSICS LETTERS

Direct nm-Scale Spatial Mapping of Traps in CIGS

(2015) P. K. Paul et al.   IEEE Journal of Photovoltaics

Applications of Electron Channeling Contrast Imaging for the Rapid Characterization of Extended Defects in III–V/Si Heterostructures

(2015) Santino D. Carnevale et al.   IEEE Journal of Photovoltaics

Theory and application of electron channelling contrast imaging under controlled diffraction conditions

(2014) Stefan Zaefferer et al.   ACTA MATERIALIA

Rapid misfit dislocation characterization in heteroepitaxial III-V/Si thin films by electron channeling contrast imaging

(2014) Santino D. Carnevale et al.   APPLIED PHYSICS LETTERS

Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements

(2014) Matteo Meneghini et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Theory of dynamical electron channeling contrast images of near-surface crystal defects

(2014) Y.N. Picard et al.   ULTRAMICROSCOPY

Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy

(2013) A. Sasikumar et al.   APPLIED PHYSICS LETTERS

Impact of proton irradiation on deep level states in n-GaN

(2013) Z. Zhang et al.   APPLIED PHYSICS LETTERS

Spatially-resolved spectroscopic measurements of Ec − 0.57 eV traps in AlGaN/GaN high electron mobility transistors

(2013) D. W. Cardwell et al.   APPLIED PHYSICS LETTERS

Mg Doping Affects Dislocation Core Structures in GaN

(2013) S. K. Rhode et al.   PHYSICAL REVIEW LETTERS

Nm-scale measurements of fast surface potential transients in an AlGaN/GaN high electron mobility transistor

(2012) D. W. Cardwell et al.   APPLIED PHYSICS LETTERS

Rapid Nondestructive Analysis of Threading Dislocations in Wurtzite Materials Using the Scanning Electron Microscope

(2012) G. Naresh-Kumar et al.   PHYSICAL REVIEW LETTERS

Direct observation of 0.57eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors

(2012) A.R. Arehart et al.   SOLID-STATE ELECTRONICS

Identifying threading dislocations in GaN films and substrates by electron channelling

(2011) RANGA J. KAMALADASA et al.   JOURNAL OF MICROSCOPY

Traps and defects in pre- and post- stressed AlGaN-GaN high electron mobility transistors

(2011) Yongkun Sin et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

On the origin of threading dislocations in GaN films

(2009) M. A. Moram et al.   JOURNAL OF APPLIED PHYSICS

Resolving the Burgers vector for individual GaN dislocations by electron channeling contrast imaging

(2009) Y.N. Picard et al.   SCRIPTA MATERIALIA