Co-Occurrence of Threshold Switching and Memory Switching in $\hbox{Pt}/\hbox{NbO}_{x}/\hbox{Pt}$ Cells for Crosspoint Memory Applications

Coexistence of Memristance and Negative Differential Resistance in a Nanoscale Metal-Oxide-Metal System

(2011) Matthew D. Pickett et al.   ADVANCED MATERIALS

Excellent Selector Characteristics of Nanoscale $ \hbox{VO}_{2}$ for High-Density Bipolar ReRAM Applications

(2011) Myungwoo Son et al.   IEEE ELECTRON DEVICE LETTERS

Unipolar resistive switching in insulating niobium oxide film and probing electroforming induced metallic components

(2011) Kyooho Jung et al.   JOURNAL OF APPLIED PHYSICS

Electrically induced conducting nanochannels in an amorphous resistive switching niobium oxide film

(2010) Kyooho Jung et al.   APPLIED PHYSICS LETTERS

Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

(2010) L. Goux et al.   APPLIED PHYSICS LETTERS

Bipolar resistive switching characteristics of atomic layer deposited Nb2O5 thin films for nonvolatile memory application

(2010) Lin Chen et al.   CURRENT APPLIED PHYSICS

The mechanism of electroforming of metal oxide memristive switches

(2009) J Joshua Yang et al.   NANOTECHNOLOGY

Characteristic electroforming behavior in Pt/TiO2/Pt resistive switching cells depending on atmosphere

(2008) Doo Seok Jeong et al.   JOURNAL OF APPLIED PHYSICS