Background–limited long wavelength infrared InAs/InAs1− xSbx type-II superlattice-based photodetectors operating at 110 K

Mid-wavelength infrared heterojunction phototransistors based on type-II InAs/AlSb/GaSb superlattices

(2016) A. Haddadi et al.   APPLIED PHYSICS LETTERS

Bias-selectable dual-band mid-/long-wavelength infrared photodetectors based on InAs/InAs1−xSbx type-II superlattices

(2015) A. Haddadi et al.   APPLIED PHYSICS LETTERS

InAs/InAs1−xSbx type-II superlattices for high performance long wavelength infrared detection

(2014) A. Haddadi et al.   APPLIED PHYSICS LETTERS

Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice

(2012) B. V. Olson et al.   APPLIED PHYSICS LETTERS

Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices

(2012) H. S. Kim et al.   APPLIED PHYSICS LETTERS

Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb

(2011) E. H. Steenbergen et al.   APPLIED PHYSICS LETTERS

Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures

(2009) Dmitry Donetsky et al.   APPLIED PHYSICS LETTERS

The effect of doping the M-barrier in very long-wave type-II InAs∕GaSb heterodiodes

(2008) Darin Hoffman et al.   APPLIED PHYSICS LETTERS