Mid-wavelength infrared heterojunction phototransistors based on type-II InAs/AlSb/GaSb superlattices

Impact of three-dimensional geometry on the performance of isolated electron-injection infrared detectors

(2015) Vala Fathipour et al.   APPLIED PHYSICS LETTERS

Isolated Electron Injection Detectors With High Gain and Record Low Dark Current at Telecom Wavelength

(2014) Vala Fathipour et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Demonstration of shortwavelength infrared photodiodes based on type-II InAs/GaSb/AlSb superlattices

(2012) A. M. Hoang et al.   APPLIED PHYSICS LETTERS

Sub-Poissonian shot noise of a high internal gain injection photon detector

(2012) Omer Gokalp Memis et al.   OPTICS EXPRESS

High operating temperature midwave infrared photodiodes and focal plane arrays based on type-II InAs/GaSb superlattices

(2011) S. Abdollahi Pour et al.   APPLIED PHYSICS LETTERS

Growth and Characterization of Long-Wavelength Infrared Type-II Superlattice Photodiodes on a 3-in GaSb Wafer

(2011) Binh-Minh Nguyen et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Midwave infrared InAs/GaSb strained layer superlattice hole avalanche photodiode

(2009) Koushik Banerjee et al.   APPLIED PHYSICS LETTERS

Band edge tunability of M-structure for heterojunction design in Sb based type II superlattice photodiodes

(2008) Binh-Minh Nguyen et al.   APPLIED PHYSICS LETTERS