Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices

Structural and optical characterization of type-II InAs/InAs1−xSbx superlattices grown by metalorganic chemical vapor deposition

(2011) E. H. Steenbergen et al.   APPLIED PHYSICS LETTERS

Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb

(2011) E. H. Steenbergen et al.   APPLIED PHYSICS LETTERS

Performance Comparison of Long-Wavelength Infrared Type II Superlattice Devices with HgCdTe

(2011) David R. Rhiger   JOURNAL OF ELECTRONIC MATERIALS

High performance long wavelength infrared mega-pixel focal plane array based on type-II superlattices

(2010) Paritosh Manurkar et al.   APPLIED PHYSICS LETTERS

Minority carrier lifetime in type-2 InAs–GaSb strained-layer superlattices and bulk HgCdTe materials

(2010) Dmitry Donetsky et al.   APPLIED PHYSICS LETTERS

Direct minority carrier lifetime measurements and recombination mechanisms in long-wave infrared type II superlattices using time-resolved photoluminescence

(2010) Blair C. Connelly et al.   APPLIED PHYSICS LETTERS

“Rule 07” Revisited: Still a Good Heuristic Predictor of p/n HgCdTe Photodiode Performance?

(2010) W. E. Tennant   JOURNAL OF ELECTRONIC MATERIALS

Strain balanced InAs/InAsSb superlattice structures with optical emission to 10 μm

(2009) D. Lackner et al.   APPLIED PHYSICS LETTERS

A high-performance long wavelength superlattice complementary barrier infrared detector

(2009) David Z.-Y. Ting et al.   APPLIED PHYSICS LETTERS

Mid-IR focal plane array based on type-II InAs∕GaSb strain layer superlattice detector with nBn design

(2008) H. S. Kim et al.   APPLIED PHYSICS LETTERS

MBE HgCdTe Technology: A Very General Solution to IR Detection, Described by “Rule 07”, a Very Convenient Heuristic

(2008) W.E. Tennant et al.   JOURNAL OF ELECTRONIC MATERIALS