InAs/InAs1−xSbx type-II superlattices for high performance long wavelength infrared detection

High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection

(2014) A. M. Hoang et al.   APPLIED PHYSICS LETTERS

Influence of radiative and non-radiative recombination on the minority carrier lifetime in midwave infrared InAs/InAsSb superlattices

(2013) L. Höglund et al.   APPLIED PHYSICS LETTERS

Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice

(2012) B. V. Olson et al.   APPLIED PHYSICS LETTERS

Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices

(2012) H. S. Kim et al.   APPLIED PHYSICS LETTERS

Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb

(2011) E. H. Steenbergen et al.   APPLIED PHYSICS LETTERS

High Operability 1024$\,\times\,$1024 Long Wavelength Type-II Superlattice Focal Plane Array

(2011) Abbas Haddadi et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures

(2009) Dmitry Donetsky et al.   APPLIED PHYSICS LETTERS

Minority electron unipolar photodetectors based on type II InAs/GaSb/AlSb superlattices for very long wavelength infrared detection

(2009) B.-M. Nguyen et al.   APPLIED PHYSICS LETTERS

Band edge tunability of M-structure for heterojunction design in Sb based type II superlattice photodiodes

(2008) Binh-Minh Nguyen et al.   APPLIED PHYSICS LETTERS