Negative differential resistance and hysteresis in Au/MoO3−δ/Au devices

Resistive Switching Memory Phenomena in PEDOT PSS: Coexistence of Switchable Diode Effect and Write Once Read Many Memory

(2016) Viet Cuong Nguyen et al.   Scientific Reports

Uncovering Two Competing Switching Mechanisms for Epitaxial and Ultrathin Strontium Titanate-Based Resistive Switching Bits

(2015) Markus Kubicek et al.   ACS Nano

How Does Moisture Affect the Physical Property of Memristance for Anionic-Electronic Resistive Switching Memories?

(2015) Felix Messerschmitt et al.   ADVANCED FUNCTIONAL MATERIALS

Space charge polarization-induced symmetrical negative resistive switching in individual p-type GeSe2:Bi superstructure nanobelts for non-volatile memory

(2015) Minghui Cao et al.   Journal of Materials Chemistry C

Void formation in gold films on yttrium-doped zirconia in the initial stage of de-wetting

(2014) Eran Shaffir et al.   ACTA MATERIALIA

Negative differential resistance: Another banana?

(2014) J. Li et al.   EPL

Hole Selective MoOx Contact for Silicon Solar Cells

(2014) Corsin Battaglia et al.   NANO LETTERS

Bulk mixed ion electron conduction in amorphous gallium oxide causes memristive behaviour

(2014) Yoshitaka Aoki et al.   Nature Communications

State Dynamics and Modeling of Tantalum Oxide Memristors

(2013) John Paul Strachan et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Electro-degradation and resistive switching of Fe-doped SrTiO3 single crystal

(2013) M. Wojtyniak et al.   JOURNAL OF APPLIED PHYSICS

A Comparative Ab Initio Thermodynamic Study of Oxygen Vacancies in ZnO and SrTiO3: Emphasis on Phonon Contribution

(2013) Denis Gryaznov et al.   Journal of Physical Chemistry C

On conditions leading to crossing of I–V curve in metal1|mixed-ionic–electronic-conductor|metal2 devices

(2013) Dima Kalaev et al.   SOLID STATE IONICS

Examining the crossing of I–V curves in devices based on mixed-ionic–electronic-conductors

(2013) Dima Kalaev et al.   SOLID STATE IONICS

Symmetrical Negative Differential Resistance Behavior of a Resistive Switching Device

(2012) Yuanmin Du et al.   ACS Nano

Transition Metal Oxide Work Functions: The Influence of Cation Oxidation State and Oxygen Vacancies

(2012) Mark T. Greiner et al.   ADVANCED FUNCTIONAL MATERIALS

Metal/Metal-Oxide Interfaces: How Metal Contacts Affect the Work Function and Band Structure of MoO3

(2012) Mark T. Greiner et al.   ADVANCED FUNCTIONAL MATERIALS

Evidence for Voltage-Driven Set/Reset Processes in Bipolar Switching RRAM

(2012) Daniele Ielmini et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Nanoionic transport and electrochemical reactions in resistively switching silicon dioxide

(2012) Stefan Tappertzhofen et al.   Nanoscale

Evaluation of the local temperature of conductive filaments in resistive switching materials

(2012) E Yalon et al.   NANOTECHNOLOGY

Rectification in solid state devices under odd conditions due to motion of ionic defects

(2012) Dima Kalaev et al.   SOLID STATE IONICS

Odd rectification, hysteresis and quasi switching in solid state devices based on mixed ionic electronic conductors

(2012) I. Riess et al.   SOLID STATE IONICS

Unusual resistive switching induced by voltage in La0.7Sr0.3MnO3 thin films

(2011) Zhong-tang Xu et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Redox processes in silicon dioxide thin films using copper microelectrodes

(2011) S. Tappertzhofen et al.   APPLIED PHYSICS LETTERS

NonlinearI–Vrelations and hysteresis in solid state devices based on oxide mixed-ionic–electronic conductors

(2011) A Leshem et al.   NANOTECHNOLOGY

Measurements of current-voltage-induced heating in the Al/SrTiO3−xNy/Al memristor during electroformation and resistance switching

(2009) A. Shkabko et al.   APPLIED PHYSICS LETTERS

Role of the deep-lying electronic states of MoO3 in the enhancement of hole-injection in organic thin films

(2009) M. Kröger et al.   APPLIED PHYSICS LETTERS

The mechanism of electroforming of metal oxide memristive switches

(2009) J Joshua Yang et al.   NANOTECHNOLOGY

Characteristic electroforming behavior in Pt/TiO2/Pt resistive switching cells depending on atmosphere

(2008) Doo Seok Jeong et al.   JOURNAL OF APPLIED PHYSICS