Toward reliable RRAM performance: macro- and micro-analysis of operation processes

Impact of RRAM Read Fluctuations on the Program-Verify Approach

(2017) David M. Nminibapiel et al.   IEEE ELECTRON DEVICE LETTERS

Characteristics of Resistive Memory Read Fluctuations in Endurance Cycling

(2017) David M. Nminibapiel et al.   IEEE ELECTRON DEVICE LETTERS

Microscopic origin of read current noise in TaOx-based resistive switching memory by ultra-low temperature measurement

(2016) Yue Pan et al.   APPLIED PHYSICS LETTERS

Conductive paths through polycrystalline BaTiO3: Scanning probe microscopy study

(2016) Talin Ayvazian et al.   APPLIED PHYSICS LETTERS

Relaxation Effect in RRAM Arrays: Demonstration and Characteristics

(2016) Chen Wang et al.   IEEE ELECTRON DEVICE LETTERS

Intrinsic Tailing of Resistive States Distributions in Amorphous HfOx and TaOx Based Resistive Random Access Memories

(2015) Sergiu Clima et al.   IEEE ELECTRON DEVICE LETTERS

Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching

(2015) Andrea Padovani et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Noise-Induced Resistance Broadening in Resistive Switching Memory—Part II: Array Statistics

(2015) Stefano Ambrogio et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Modelling of oxygen vacancy aggregates in monoclinic HfO2: can they contribute to conductive filament formation?

(2015) Samuel R Bradley et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Electron-Injection-Assisted Generation of Oxygen Vacancies in MonoclinicHfO2

(2015) Samuel R. Bradley et al.   Physical Review Applied

Engineering of the Chemical Reactivity of the Ti/HfO2 Interface for RRAM: Experiment and Theory.

(2014) Pauline Calka et al.   ACS Applied Materials & Interfaces

Optimal stoichiometry for nucleation and growth of conductive filaments in HfOx

(2014) K P McKenna   MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING

Leakage Current-Forming Voltage Relation and Oxygen Gettering in HfOx RRAM Devices

(2013) Kristina G. Young-Fisher et al.   IEEE ELECTRON DEVICE LETTERS

Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures

(2012) M. Lanza et al.   APPLIED PHYSICS LETTERS

Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries

(2012) M. Lanza et al.   APPLIED PHYSICS LETTERS

Metal–Oxide RRAM

(2012) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

The interaction of oxygen vacancies with grain boundaries in monoclinic HfO2

(2009) Keith McKenna et al.   APPLIED PHYSICS LETTERS

Electronic properties of defects in polycrystalline dielectric materials

(2009) K.P. McKenna et al.   MICROELECTRONIC ENGINEERING

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today