Intrinsic Tailing of Resistive States Distributions in Amorphous HfOx and TaOx Based Resistive Random Access Memories

Published 2015 View Full Article

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Title
Intrinsic Tailing of Resistive States Distributions in Amorphous HfOx and TaOx Based Resistive Random Access Memories
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 36, Issue 8, Pages 769-771
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2015-06-24
DOI
10.1109/led.2015.2448731

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