Subthreshold swing improvement in MoS2 transistors by the negative-capacitance effect in a ferroelectric Al-doped-HfO2/HfO2 gate dielectric stack
出版年份 2017 全文链接
标题
Subthreshold swing improvement in MoS2 transistors by the negative-capacitance effect in a ferroelectric Al-doped-HfO2/HfO2 gate dielectric stack
作者
关键词
-
出版物
Nanoscale
Volume 9, Issue 18, Pages 6122-6127
出版商
Royal Society of Chemistry (RSC)
发表日期
2017-04-20
DOI
10.1039/c7nr00088j
参考文献
相关参考文献
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