Laser hyperdoping silicon for enhanced infrared optoelectronic properties

Effect of layer thickness on device response of silicon heavily supersaturated with sulfur

(2016) David Hutchinson et al.   AIP Advances

Single-Phase Filamentary Cellular Breakdown Via Laser-Induced Solute Segregation

(2015) Austin J. Akey et al.   ADVANCED FUNCTIONAL MATERIALS

Pulsed laser irradiation-induced microstructures in the Mn ion implanted Si

(2015) Muneyuki Naito et al.   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

Ultrafast laser processing of materials: a review

(2015) Katherine C. Phillips et al.   Advances in Optics and Photonics

Enhancing the Infrared Photoresponse of Silicon by Controlling the Fermi Level Location within an Impurity Band

(2014) Christie B. Simmons et al.   ADVANCED FUNCTIONAL MATERIALS

Hyperdoping of silicon with deep-level impurities by pulsed YAG laser melting

(2014) Ikurou Umezu et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

On the limits to Ti incorporation into Si using pulsed laser melting

(2014) Jay Mathews et al.   APPLIED PHYSICS LETTERS

Picosecond carrier recombination dynamics in chalcogen-hyperdoped silicon

(2014) Meng-Ju Sher et al.   APPLIED PHYSICS LETTERS

Room-temperature operation of a titanium supersaturated silicon-based infrared photodetector

(2014) E. García-Hemme et al.   APPLIED PHYSICS LETTERS

Molecular Strategies for Configurational Sulfur Doping of Group IV Semiconductors Grown on Si(100) Using S(MH3)2 (M = Si,Ge) Delivery Sources: An Experimental and Theoretical Inquiry

(2014) J. Kouvetakis et al.   CHEMISTRY OF MATERIALS

Black silicon: fabrication methods, properties and solar energy applications

(2014) Xiaogang Liu et al.   Energy & Environmental Science

Morphological stability during solidification of silicon incorporating metallic impurities

(2014) Jeffrey M. Warrender et al.   JOURNAL OF APPLIED PHYSICS

Room-temperature sub-band gap optoelectronic response of hyperdoped silicon

(2014) Jonathan P. Mailoa et al.   Nature Communications

Far infrared photoconductivity in a silicon based material: Vanadium supersaturated silicon

(2013) E. García-Hemme et al.   APPLIED PHYSICS LETTERS

Supersaturating silicon with transition metals by ion implantation and pulsed laser melting

(2013) Daniel Recht et al.   JOURNAL OF APPLIED PHYSICS

Deactivation of metastable single-crystal silicon hyperdoped with sulfur

(2013) C. B. Simmons et al.   JOURNAL OF APPLIED PHYSICS

Methodology for vetting heavily doped semiconductors for intermediate band photovoltaics: A case study in sulfur-hyperdoped silicon

(2013) J. T. Sullivan et al.   JOURNAL OF APPLIED PHYSICS

Emergence of very broad infrared absorption band by hyperdoping of silicon with chalcogens

(2013) Ikurou Umezu et al.   JOURNAL OF APPLIED PHYSICS

Contactless Microwave Measurements of Photoconductivity in Silicon Hyperdoped with Chalcogens

(2012) Daniel Recht et al.   Applied Physics Express

Photocarrier lifetime and transport in silicon supersaturated with sulfur

(2012) Peter D. Persans et al.   APPLIED PHYSICS LETTERS

Nonradiative lifetimes in intermediate band photovoltaics—Absence of lifetime recovery

(2012) Jacob J. Krich et al.   JOURNAL OF APPLIED PHYSICS

Studying femtosecond-laser hyperdoping by controlling surface morphology

(2012) Mark T. Winkler et al.   JOURNAL OF APPLIED PHYSICS

Insulator-to-Metal Transition in Selenium-Hyperdoped Silicon: Observation and Origin

(2012) Elif Ertekin et al.   PHYSICAL REVIEW LETTERS

Enhanced visible and near-infrared optical absorption in silicon supersaturated with chalcogens

(2011) Si H. Pan et al.   APPLIED PHYSICS LETTERS

Reactivation of sub-bandgap absorption in chalcogen-hyperdoped silicon

(2011) Bonna K. Newman et al.   APPLIED PHYSICS LETTERS

Extended infrared photoresponse and gain in chalcogen-supersaturated silicon photodiodes

(2011) Aurore J. Said et al.   APPLIED PHYSICS LETTERS

Insulator-to-Metal Transition in Sulfur-Doped Silicon

(2011) Mark T. Winkler et al.   PHYSICAL REVIEW LETTERS

High quality Ti-implanted Si layers above the Mott limit

(2010) J. Olea et al.   JOURNAL OF APPLIED PHYSICS

Fabrication and subband gap optical properties of silicon supersaturated with chalcogens by ion implantation and pulsed laser melting

(2010) Brion P. Bob et al.   JOURNAL OF APPLIED PHYSICS

A ten-year perspective on dilute magnetic semiconductors and oxides

(2010) Tomasz Dietl   NATURE MATERIALS

Fabrication and sub-band-gap absorption of single-crystal Si supersaturated with Se by pulsed laser mixing

(2009) Malek Tabbal et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Lifetime recovery in ultrahighly titanium-doped silicon for the implementation of an intermediate band material

(2009) E. Antolín et al.   APPLIED PHYSICS LETTERS

Silicon-Germanium Nanostructures for Light Emitters and On-Chip Optical Interconnects

(2009) Leonid Tsybeskov et al.   PROCEEDINGS OF THE IEEE

Laser doping of chromium as a double acceptor in silicon carbide with reduced crystalline damage and nearly all dopants in activated state

(2008) Sachin Bet et al.   ACTA MATERIALIA