3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits

Manipulation of nanoscale V-pits to optimize internal quantum efficiency of InGaN multiple quantum wells

(2015) Chiao-Yun Chang et al.   APPLIED PHYSICS LETTERS

A new interpretation for performance improvement of high-efficiency vertical blue light-emitting diodes by InGaN/GaN superlattices

(2015)   JOURNAL OF APPLIED PHYSICS

Hole injection from the sidewall of V-shaped pits into c-plane multiple quantum wells in InGaN light emitting diodes

(2015) Xiaoming Wu et al.   JOURNAL OF APPLIED PHYSICS

Percolation transport study in nitride based LED by considering the random alloy fluctuation

(2015) Chen-Kuo Wu et al.   Journal of Computational Electronics

Electroluminescence from the sidewall quantum wells in the V-shaped pits of InGaN light emitting diodes

(2014) Xiaoming Wu et al.   APPLIED PHYSICS LETTERS

Study on the Optimization for Current Spreading Effect of Lateral GaN/InGaN LEDs

(2014) Chi-Kang Li et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior

(2014) Tsung-Jui Yang et al.   JOURNAL OF APPLIED PHYSICS

Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes

(2014)   JOURNAL OF APPLIED PHYSICS

Influence of V-pits on the efficiency droop in InGaN/GaN quantum wells

(2014) Jaekyun Kim et al.   OPTICS EXPRESS

Improvement of efficiency and electrical properties using intentionally formed V-shaped pits in InGaN/GaN multiple quantum well light-emitting diodes

(2013) Sang-Heon Han et al.   APPLIED PHYSICS LETTERS

Effect of V-Shaped Pit Size on the Reverse Leakage Current of InGaN/GaN Light-Emitting Diodes

(2013) Jaekyun Kim et al.   IEEE ELECTRON DEVICE LETTERS

Three dimensional numerical study on the efficiency of a core-shell InGaN/GaN multiple quantum well nanowire light-emitting diodes

(2013) Chi-Kang Li et al.   JOURNAL OF APPLIED PHYSICS

Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop

(2013) Justin Iveland et al.   PHYSICAL REVIEW LETTERS

Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes

(2012) L. C. Le et al.   APPLIED PHYSICS LETTERS

Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure

(2012) Yuh-Renn Wu et al.   APPLIED PHYSICS LETTERS

Study of droop phenomena in InGaN-based blue and green light-emitting diodes by temperature-dependent electroluminescence

(2012) Dong-Soo Shin et al.   APPLIED PHYSICS LETTERS

Atomic scale characterization of GaInN/GaN multiple quantum wells in V-shaped pits

(2011) Shigetaka Tomiya et al.   APPLIED PHYSICS LETTERS

Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes

(2011) Emmanouil Kioupakis et al.   APPLIED PHYSICS LETTERS

Study on the Current Spreading Effect and Light Extraction Enhancement of Vertical GaN/InGaN LEDs

(2011) Chi-Kang Li et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Carrier localization mechanisms in InxGa1−xN/GaN quantum wells

(2011) D. Watson-Parris et al.   PHYSICAL REVIEW B

Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis

(2010) Aurélien David et al.   APPLIED PHYSICS LETTERS

Efficiency droop in nitride-based light-emitting diodes

(2010) Joachim Piprek   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Rate equation analysis of efficiency droop in InGaN light-emitting diodes

(2009) Han-Youl Ryu et al.   APPLIED PHYSICS LETTERS

Gmsh: A 3-D finite element mesh generator with built-in pre- and post-processing facilities

(2009) Christophe Geuzaine et al.   INTERNATIONAL JOURNAL FOR NUMERICAL METHODS IN ENGINEERING