Engineering of band gap states of amorphous SiZnSnO semiconductor as a function of Si doping concentration
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Title
Engineering of band gap states of amorphous SiZnSnO semiconductor as a function of Si doping concentration
Authors
Keywords
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Journal
Scientific Reports
Volume 6, Issue 1, Pages -
Publisher
Springer Nature
Online
2016-11-04
DOI
10.1038/srep36504
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