Band gap engineering of In2O3 by alloying with Tl2O3

Growth, disorder, and physical properties of ZnSnN2

(2013) N. Feldberg et al.   APPLIED PHYSICS LETTERS

PbO2: from semi-metal to transparent conducting oxide by defect chemistry control

(2012) Aron Walsh et al.   CHEMICAL COMMUNICATIONS

On the possibility of p-type SnO2

(2012) David O. Scanlon et al.   JOURNAL OF MATERIALS CHEMISTRY

Understanding the p-type defect chemistry of CuCrO2

(2011) David O. Scanlon et al.   JOURNAL OF MATERIALS CHEMISTRY

Orientation dependent ionization potential of In2O3: a natural source for inhomogeneous barrier formation at electrode interfaces in organic electronics

(2011) Mareike V Hohmann et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Conductivity in transparent oxide semiconductors

(2011) P D C King et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Control of the band-gap states of metal oxides by the application of epitaxial strain: The case of indium oxide

(2011) Aron Walsh et al.   PHYSICAL REVIEW B

Nature of the band gap ofTl2O3

(2011) Aoife B. Kehoe et al.   PHYSICAL REVIEW B

Comment on “Intrinsicn-type Behavior in Transparent Conducting Oxides: A Comparative Hybrid-Functional Study ofIn2O3,SnO2, and ZnO”

(2011) Stephan Lany et al.   PHYSICAL REVIEW LETTERS

Electronic and Structural Properties of SnxTi1−xO2(0.0 ≤x≤ 0.1) Solid Solutions

(2010) M. Hilni Harunsani et al.   CHEMISTRY OF MATERIALS

Structure, stability and work functions of the low index surfaces of pure indium oxide and Sn-doped indium oxide (ITO) from density functional theory

(2010) Aron Walsh et al.   JOURNAL OF MATERIALS CHEMISTRY

Branch-point energies and band discontinuities of III-nitrides and III-/II-oxides from quasiparticle band-structure calculations

(2009) A. Schleife et al.   APPLIED PHYSICS LETTERS

Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedralIn2O3

(2009) P. D. C. King et al.   PHYSICAL REVIEW B

Intrinsicn-Type Behavior in Transparent Conducting Oxides: A Comparative Hybrid-Functional Study ofIn2O3,SnO2, and ZnO

(2009) Péter Ágoston et al.   PHYSICAL REVIEW LETTERS

Growth of In2O3(100) on Y-stabilized ZrO2(100) by O-plasma assisted molecular beam epitaxy

(2008) A. Bourlange et al.   APPLIED PHYSICS LETTERS

Nature of the Band Gap ofIn2O3Revealed by First-Principles Calculations and X-Ray Spectroscopy

(2008) Aron Walsh et al.   PHYSICAL REVIEW LETTERS

Surface Electron Accumulation and the Charge Neutrality Level inIn2O3

(2008) P. D. C. King et al.   PHYSICAL REVIEW LETTERS