Structural-relaxation-driven electron doping of amorphous oxide semiconductors by increasing the concentration of oxygen vacancies in shallow-donor states
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Title
Structural-relaxation-driven electron doping of amorphous oxide semiconductors by increasing the concentration of oxygen vacancies in shallow-donor states
Authors
Keywords
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Journal
NPG Asia Materials
Volume 8, Issue 3, Pages e250-e250
Publisher
Springer Nature
Online
2016-03-25
DOI
10.1038/am.2016.11
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