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Title
Coulomb blockade in monolayer MoS2single electron transistor
Authors
Keywords
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Journal
Nanoscale
Volume 8, Issue 14, Pages 7755-7760
Publisher
Royal Society of Chemistry (RSC)
Online
2016-03-07
DOI
10.1039/c5nr08954a
References
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Related references
Note: Only part of the references are listed.- A gate defined quantum dot on the two-dimensional transition metal dichalcogenide semiconductor WSe2
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- (2012) Saptarshi Das et al. NANO LETTERS
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- (2012) Hualing Zeng et al. Nature Nanotechnology
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- Coupled Spin and Valley Physics in Monolayers ofMoS2and Other Group-VI Dichalcogenides
- (2012) Di Xiao et al. PHYSICAL REVIEW LETTERS
- Valley-selective circular dichroism of monolayer molybdenum disulphide
- (2012) Ting Cao et al. Nature Communications
- Single-layer MoS2 transistors
- (2011) B. Radisavljevic et al. Nature Nanotechnology
- Influence of quantum confinement on the electronic structure of the transition metal sulfideTS2
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- Emerging Photoluminescence in Monolayer MoS2
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