Temperature dependence of Coulomb oscillations in a few-layer two-dimensional WS2 quantum dot
Published 2015 View Full Article
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Title
Temperature dependence of Coulomb oscillations in a few-layer two-dimensional WS2 quantum dot
Authors
Keywords
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Journal
Scientific Reports
Volume 5, Issue 1, Pages -
Publisher
Springer Nature
Online
2015-11-05
DOI
10.1038/srep16113
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- Electronics based on two-dimensional materials
- (2014) Gianluca Fiori et al. Nature Nanotechnology
- Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics
- (2014) Rui Cheng et al. Nature Communications
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- (2013) Wenzhong Bao et al. APPLIED PHYSICS LETTERS
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- (2013) Oriol Lopez-Sanchez et al. Nature Nanotechnology
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- Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
- (2012) Qing Hua Wang et al. Nature Nanotechnology
- Tunable dielectric response of transition metals dichalcogenides MX2 (M=Mo, W; X=S, Se, Te): Effect of quantum confinement
- (2012) Ashok Kumar et al. PHYSICA B-CONDENSED MATTER
- Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors
- (2011) Leitao Liu et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
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- (2011) B. Radisavljevic et al. Nature Nanotechnology
- Coulomb gap in graphene nanoribbons
- (2011) S. Dröscher et al. PHYSICAL REVIEW B
- A graphene quantum dot with a single electron transistor as an integrated charge sensor
- (2010) Lin-Jun Wang et al. APPLIED PHYSICS LETTERS
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- (2010) Frank Schwierz Nature Nanotechnology
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- (2008) K.I. Bolotin et al. SOLID STATE COMMUNICATIONS
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