Journal
NANO LETTERS
Volume 16, Issue 2, Pages 1317-1322Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b04719
Keywords
Black phosphorus; phosphorene; stacking fault; transport; lateral junction
Categories
Funding
- U.S. Department of Energy (DOE) [DE-SC0002623]
- National Science Foundation of Jiangsu Province of China [BK201320668, BK20151409]
- National Basic Research Program of China [2015CB352100]
- DOE [DE-AC02-05CH11231]
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Interface engineering is critical for enriching the electronic and transport properties of two-dimensional materials. Here, we identify a new stacking, named A delta, in few-layer phosphorenes (FLPs) and black phosphorus (BP) based on first-principles calculation. With its low formation energy, the AS stacking could exist in FLPs and BP as a stacking fault. The presence of the A delta stacking fault induces a direct to indirect transition of the band gap in FLPs. It also affects the carrier mobilities by significantly increasing the carrier effective masses. More importantly, the A delta stacking enables the fabrication of a whole spectrum of lateral junctions with all the type-I, II, and III alignments simply through the manipulation of the van der Waals stacking without resorting to any chemical modification. This is achieved by the widely tunable electron affinity and ionization potential of FLPs and BP with the A delta stacking.
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