Journal
APPLIED PHYSICS LETTERS
Volume 101, Issue 26, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4772532
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- FCRP center on Functional Engineered and Nano Architectonics (FENA)
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We have studied quantum transport in graphene nanoribbon tunnel field-effect transistors. Unlike other studies on similar structures, we have included dissipative processes induced by inelastic electron-phonon scattering and edge roughness in the nanoribbon self-consistently within a non-equilibrium transport simulation. Our results show that the dissipative scattering imposes a limit to the minimum OFF current and a minimum subthreshold swing that can be obtained even for long channel lengths where direct source-drain tunneling is inhibited. The edge roughness, in the presence of dissipative scattering, somewhat surprisingly, shows a classical behavior where it mostly reduces the maximum ON current achievable in this structure. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4772532]
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