Polarization Switching and Charge Trapping in HfO2-Based Ferroelectric Transistors

In search of Pca21 phase ferroelectrics

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Linking the Intrinsic Electrical Response of Ferroelectric Devices to Material Properties by Means of Impedance Spectroscopy

(2023) Lorenzo Benatti et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Unraveling the Dynamics of Charge Trapping and De-Trapping in Ferroelectric FETs

(2022) Shan Deng et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Electron trapping in ferroelectric HfO2

(2021) Roman A. Izmailov et al.   Physical Review Materials

Defect profiling in FEFET Si:HfO2 layers

(2020) B. J. O'Sullivan et al.   APPLIED PHYSICS LETTERS

A perspective on semiconductor devices based on fluorite-structured ferroelectrics from the materials–device integration perspective

(2020) Ju Yong Park et al.   JOURNAL OF APPLIED PHYSICS

A Study of Endurance Issues in HfO2-Based Ferroelectric Field Effect Transistors: Charge Trapping and Trap Generation

(2018) Nanbo Gong et al.   IEEE ELECTRON DEVICE LETTERS

High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty

(2018) T. Ali et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2

(2016) Michael Hoffmann et al.   ADVANCED FUNCTIONAL MATERIALS

Impact of charge trapping on the ferroelectric switching behavior of doped HfO2

(2015) Milan Pešić et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Ferroelectric Zr0.5Hf0.5O2thin films for nonvolatile memory applications

(2011) J. Müller et al.   APPLIED PHYSICS LETTERS