High‐throughput screening of phase‐engineered atomically thin transition‐metal dichalcogenides for van der Waals contacts at the Schottky–Mott limit

Fermi‐Level Pinning‐Free WSe 2 Transistors via 2D Van der Waals Metal Contacts and Their Circuits

(2022) Jisu Jang et al.   ADVANCED MATERIALS

Interaction- and defect-free van der Waals contacts between metals and two-dimensional semiconductors

(2022) Gihyeon Kwon et al.   Nature Electronics

High Performance β‐Ga 2 O 3 Schottky Barrier Transistors with Large Work Function TMD Gate of NbS 2 and TaS 2

(2021) Ki‐Tae Kim et al.   ADVANCED FUNCTIONAL MATERIALS

2D Metallic Transition‐Metal Dichalcogenides: Structures, Synthesis, Properties, and Applications

(2021) Bei Zhao et al.   ADVANCED FUNCTIONAL MATERIALS

Graphene–Transition Metal Dichalcogenide Heterojunctions for Scalable and Low-Power Complementary Integrated Circuits

(2020) Chao-Hui Yeh et al.   ACS Nano

Layer-dependent band engineering of Pd dichalcogenides: a first-principles study

(2020) Liang-Ying Feng et al.   NEW JOURNAL OF PHYSICS

Ultralow Schottky Barriers in Hexagonal Boron Nitride-Encapsulated Monolayer WSe2 Tunnel Field-Effect Transistors

(2020) Gaurav Pande et al.   ACS Applied Materials & Interfaces

Theoretical Study of Interfacial and Electronic Properties of Transition Metal Dichalcogenides and Organic Molecules Based van der Waals Heterostructures

(2020) Mohammad Rezwan Habib et al.   Advanced Theory and Simulations

Atomic observation of phase transition in layered SnS2 driven by in situ heating and electron beam irradiation

(2020) Ruicong Xie et al.   APPLIED PHYSICS LETTERS

Interfacial Properties for a Monolayer CrS2 Contact with Metal: A Theoretical Perspective

(2019) Mohammad R. Habib et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors

(2019) Yan Wang et al.   NATURE

Universal Fermi-Level Pinning in Transition-Metal Dichalcogenides

(2019) Kai Sotthewes et al.   Journal of Physical Chemistry C

van der Waals Epitaxial Growth of Atomically Thin 2D Metals on Dangling‐Bond‐Free WSe 2 and WS 2

(2019) Ruixia Wu et al.   ADVANCED FUNCTIONAL MATERIALS

Gate‐Tunable Graphene–WSe 2 Heterojunctions at the Schottky–Mott Limit

(2019) Samuel W. LaGasse et al.   ADVANCED MATERIALS

Contact Engineering High Performance n-Type MoTe2 Transistors

(2019) Michal J Mleczko et al.   NANO LETTERS

Strain-based room-temperature non-volatile MoTe2 ferroelectric phase change transistor

(2019) Wenhui Hou et al.   Nature Nanotechnology

In Situ Probing Molecular Intercalation in Two-Dimensional Layered Semiconductors

(2019) Qiyuan He et al.   NANO LETTERS

A new metal transfer process for van der Waals contacts to vertical Schottky-junction transition metal dichalcogenide photovoltaics

(2019) Cora M. Went et al.   Science Advances

van der Waals Metallic Transition Metal Dichalcogenides

(2018) Gang Hee Han et al.   CHEMICAL REVIEWS

Contact engineering for 2D materials and devices

(2018) Daniel S. Schulman et al.   CHEMICAL SOCIETY REVIEWS

Vertical and In-Plane Current Devices Using NbS2/n-MoS2 van der Waals Schottky Junction and Graphene Contact

(2018) Hyung Gon Shin et al.   NANO LETTERS

Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions

(2018) Yuan Liu et al.   NATURE

Charge carrier injection and transport engineering in two-dimensional transition metal dichalcogenides

(2018) José Ramón Durán Retamal et al.   Chemical Science

Epitaxial Growth of Two-Dimensional Metal–Semiconductor Transition-Metal Dichalcogenide Vertical Stacks (VSe2/MX2) and Their Band Alignments

(2018) Zhepeng Zhang et al.   ACS Nano

Lowering the Schottky Barrier Height by Graphene/Ag Electrodes for High-Mobility MoS2 Field-Effect Transistors

(2018) Sang-Soo Chee et al.   ADVANCED MATERIALS

2D transition metal dichalcogenides

(2017) Sajedeh Manzeli et al.   Nature Reviews Materials

Evidence for Chemical Vapor Induced 2H to 1T Phase Transition in MoX2 (X = Se, S) Transition Metal Dichalcogenide Films

(2017) Adam L. Friedman et al.   Scientific Reports

The capacity fading mechanism and improvement of cycling stability in MoS2-based anode materials for lithium-ion batteries

(2016) Haibo Shu et al.   Nanoscale

Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides

(2016) Kin Fai Mak et al.   Nature Photonics

Structural semiconductor-to-semimetal phase transition in two-dimensional materials induced by electrostatic gating

(2016) Yao Li et al.   Nature Communications

3D Behavior of Schottky Barriers of 2D Transition-Metal Dichalcogenides

(2015) Yuzheng Guo et al.   ACS Applied Materials & Interfaces

Impact of Contact on the Operation and Performance of Back-Gated Monolayer MoS2 Field-Effect-Transistors

(2015) Wei Liu et al.   ACS Nano

Physical and chemical tuning of two-dimensional transition metal dichalcogenides

(2015) Haotian Wang et al.   CHEMICAL SOCIETY REVIEWS

Computational 2D Materials Database: Electronic Structure of Transition-Metal Dichalcogenides and Oxides

(2015) Filip A. Rasmussen et al.   Journal of Physical Chemistry C

Electrical contacts to two-dimensional semiconductors

(2015) Adrien Allain et al.   NATURE MATERIALS

High Mobility WSe2 p- and n-Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts

(2014) Hsun-Jen Chuang et al.   NANO LETTERS

Control of Radiation Damage in MoS2 by Graphene Encapsulation

(2013) Recep Zan et al.   ACS Nano

High Performance Multilayer MoS2 Transistors with Scandium Contacts

(2012) Saptarshi Das et al.   NANO LETTERS

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

(2012) Qing Hua Wang et al.   Nature Nanotechnology

Electrical contacts to one- and two-dimensional nanomaterials

(2011) François Léonard et al.   Nature Nanotechnology

A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu

(2010) Stefan Grimme et al.   JOURNAL OF CHEMICAL PHYSICS