Interaction- and defect-free van der Waals contacts between metals and two-dimensional semiconductors

Ultralow contact resistance between semimetal and monolayer semiconductors

(2021) Pin-Chun Shen et al.   NATURE

Doping-free complementary WSe2 circuit via van der Waals metal integration

(2020) Lingan Kong et al.   Nature Communications

Titanium disulfide as Schottky/ohmic contact for monolayer molybdenum disulfide

(2020) Junsen Gao et al.   npj 2D Materials and Applications

Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors

(2019) Yan Wang et al.   NATURE

Van der Waals integration before and beyond two-dimensional materials

(2019) Yuan Liu et al.   NATURE

Contact Engineering High Performance n-Type MoTe2 Transistors

(2019) Michal J Mleczko et al.   NANO LETTERS

Clean Interface Contact Using a ZnO Interlayer for Low-Contact-Resistance MoS2 Transistors

(2019) Jisu Jang et al.   ACS Applied Materials & Interfaces

Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions

(2018) Yuan Liu et al.   NATURE

Surface Analysis of WSe2 Crystals: Spatial and Electronic Variability

(2016) Rafik Addou et al.   ACS Applied Materials & Interfaces

Gold-Mediated Exfoliation of Ultralarge Optoelectronically-Perfect Monolayers

(2016) Sujay B. Desai et al.   ADVANCED MATERIALS

Contact Metal–MoS2 Interfacial Reactions and Potential Implications on MoS2-Based Device Performance

(2016) Christopher M. Smyth et al.   Journal of Physical Chemistry C

Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors

(2016) Hsun-Jen Chuang et al.   NANO LETTERS

Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition

(2016) Chris D. English et al.   NANO LETTERS

Self-Limiting Oxides on WSe2 as Controlled Surface Acceptors and Low-Resistance Hole Contacts

(2016) Mahito Yamamoto et al.   NANO LETTERS

Does p-type ohmic contact exist in WSe2–metal interfaces?

(2016) Yangyang Wang et al.   Nanoscale

Stable electrical performance observed in large-scale monolayer WSe2(1−x)S2xwith tunable band gap

(2016) Jian Huang et al.   NANOTECHNOLOGY

Reduction of Fermi level pinning at Au–MoS2interfaces by atomic passivation on Au surface

(2016) Kyung-Ah Min et al.   2D Materials

Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides

(2016) Shuigang Xu et al.   2D Materials

Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier

(2016) Y. Liu et al.   Science Advances

Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations

(2016) Hongxia Zhong et al.   Scientific Reports

High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors

(2015) Hema C. P. Movva et al.   ACS Nano

High-Performance, Air-Stable, Top-Gate, p-Channel WSe2Field-Effect Transistor with Fluoropolymer Buffer Layer

(2015) Seyed Hossein Hosseini Shokouh et al.   ADVANCED FUNCTIONAL MATERIALS

Electrical contacts to two-dimensional semiconductors

(2015) Adrien Allain et al.   NATURE MATERIALS

Exploring atomic defects in molybdenum disulphide monolayers

(2015) Jinhua Hong et al.   Nature Communications

Electron and Hole Mobilities in Single-Layer WSe2

(2014) Adrien Allain et al.   ACS Nano

High Mobility WSe2 p- and n-Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts

(2014) Hsun-Jen Chuang et al.   NANO LETTERS

Impact of intrinsic atomic defects on the electronic structure of MoS2monolayers

(2014) Santosh KC et al.   NANOTECHNOLOGY

The physics and chemistry of the Schottky barrier height

(2014)   Applied Physics Reviews

Hole mobility enhancement and p -doping in monolayer WSe2 by gold decoration

(2014) Chang-Hsiao Chen et al.   2D Materials

Intrinsic Structural Defects in Monolayer Molybdenum Disulfide

(2013) Wu Zhou et al.   NANO LETTERS

High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

(2012) Hui Fang et al.   NANO LETTERS

Designing Electrical Contacts toMoS2Monolayers: A Computational Study

(2012) Igor Popov et al.   PHYSICAL REVIEW LETTERS

Communication: Enhancement of dopant dependent x-ray photoelectron spectroscopy peak shifts of Si by surface photovoltage

(2011) Hikmet Sezen et al.   JOURNAL OF CHEMICAL PHYSICS

Measured velocity distribution of sputtered Al atoms perpendicular and parallel to the target

(2008) R Ramos et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS